STZT2907A small signal pnp transistor preliminary data n silicon epitaxial planar pnp transistor n sot-223 plastic package for surface mounting circuits n tape & reel packing n the npn complementary type is stzt2222a applications n well suitable for smd mother board assembly n small load switch transistor with high gain and low saturation voltage ? internal schematic diagram february 2003 sot-223 type marking STZT2907A n29a absolute maximum ratings symbol parameter value unit v cbo collector-emitter voltage (i e = 0) -60 v v ceo collector-emitter voltage (i b = 0) -60 v v ebo emitter-base voltage (i c = 0) -5 v i c collector current -0.6 a i cm collector peak current (t p < 5 ms) -0.8 a p tot total dissipation at t amb = 25 o c 1.3 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 2 3 1/4
thermal data r thj-amb thermal resistance junction-ambient max 96.1 o c/w device mounted on a pcb area of 1 cm 2 electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cex collector cut-off current (v be = -3 v) v ce = -30 v -50 na i bex base cut-off current (v be = -3 v) v ce = -30 v -50 na i cbo collector cut-off current (i e = 0) v cb = -50 v -10 na v (br)ceo * collector-emitter breakdown voltage (i b = 0) i c = -10 ma -60 v v (br)cbo collector-base breakdown voltage (i e = 0) i c = -10 m a -60 v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = -10 m a -5 v v ce(sat) * collector-emitter saturation voltage i c = -150 ma i b = -15 ma i c = -500 ma i b = -50 ma -0.4 -1.6 v v v be(sat) * collector-base saturation voltage i c = -150 ma i b = -15 ma i c = -500 ma i b = -50 ma -1.3 -2.6 v v h fe * dc current gain i c = -0.1 ma v ce = -10 v i c = -1 ma v ce = -10 v i c = -10 ma v ce = -10 v i c = -150 ma v ce = -10 v i c = -500 ma v ce = -10 v 75 100 100 100 50 300 f t transition frequency i c = -50 ma v ce = -20v f = 100mhz 200 mhz c cbo collector-base capacitance i e = 0 v cb = -10 v f = 1 mhz 8 pf c ebo emitter-base capacitance i c = 0 v eb = -2 v f = 1 mhz 30 pf t d delay time i c = -150 ma i b = -15 ma v cc = -30v 10 ns t r rise time 40 ns t on switching on time 45 ns t s storage time i c = -150 ma i b1 = -i b2 = -15ma v cc = -30v 190 ns t f fall time 30 ns t off switching off time 220 ns * pulsed: pulse duration = 300 m s, duty cycle 2 % STZT2907A 2/4
dim. mm inch min. typ. max. min. typ. max. a 1.80 0.071 b 0.60 0.70 0.80 0.024 0.027 0.031 b1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 d 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 e 3.30 3.50 3.70 0.130 0.138 0.146 h 6.70 7.00 7.30 0.264 0.276 0.287 v10 o 10 o a1 0.02 p008b sot-223 mechanical data STZT2907A 3/4
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2003 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com STZT2907A 4/4
|
